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The RBQ15BGE65ATL is a Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252GE (D-PAK) surface-mount package. It features a common cathode configuration with three terminals. Key electrical parameters include a maximum repetitive reverse voltage of 65V and an average rectified forward current of 15A. The device supports a peak forward surge current of 100A. Forward voltage is limited to 0.63V at 7.5A, while reverse current remains low at 0.14mA at 65V. The junction temperature rating reaches 150°C, with storage temperatures spanning from -55°C to 150°C.
Verify the specific ordering suffix to confirm the tape-and-reel packaging quantity of 2500 units per reel. Ensure the component designation matches the TO-252GE package code rather than standard D-PAK variants. Confirm RoHS compliance status as indicated in the official datasheet documentation before finalizing procurement specifications.
Select this component when a 65V reverse voltage rating is required alongside a 15A continuous current capacity in a surface-mount form factor. The low reverse leakage characteristic makes it suitable for applications demanding minimal standby power loss. Verify that the operating environment stays within the specified 150°C junction temperature limit to maintain performance integrity.
This part belongs to the RBQ series of Schottky barrier diodes from ROHM Semiconductor, specifically engineered for power management applications. The GE suffix denotes the specific TO-252GE package variant, distinguishing it from other pin-compatible packages like the BM series. It serves as a standard-grade discrete semiconductor solution for general-purpose power conversion tasks.
The RBQ15BM65ATL is documented as having the same pinout and package dimensions but is listed with a Last Time Buy status. Designers should verify if the functional characteristics are identical before substituting, noting the change in supply availability status between the two part numbers.