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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 100V 20A TO263S
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：20A
- Voltage - Forward (Vf) (Max) @ If：770 mV @ 10 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：140 µA @ 100 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263S
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RBQ20NS100ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 100 V and an average forward current rating of 20 A. The device exhibits a typical forward voltage of 770 mV at 10 A and a low reverse leakage current of 140 uA at 100 V. It supports a peak forward surge current of 100 A and operates at junction temperatures up to +150 C.
Feature Summary
- Dual anode common cathode configuration for bridge rectifier applications
- Low reverse leakage current characteristics
- High thermal stability with maximum junction temperature of +150 C
Applications
- General purpose rectification circuits
- Free-wheeling diodes in power supplies
- DC-DC converter output rectification
Procurement Notes
Verify the specific suffix 'ATL' against the official ROHM datasheet to confirm tape-and-reel packaging specifications and lead-free plating compliance. Ensure the ordering part number matches the exact electrical parameters required for the target application, as variations in suffixes may indicate different packaging or material compositions.
Selection Notes
Select this component when a dual common cathode topology is required within a D2PAK footprint. The 100 V rating suits low-voltage DC-DC conversion stages. Evaluate the thermal resistance of the TO-263S package relative to the PCB copper area to ensure the 20 A continuous current rating can be maintained without exceeding the 150 C junction limit.
Part Context
This device belongs to the RBQ series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and low reverse leakage current, designed for high-efficiency power management. The TO-263S package provides a robust solution for surface-mount assembly in compact power electronics designs.
Replacement Considerations
The RBQ20NS100A is listed as an alias part number. Verify pinout compatibility and electrical tolerances before substituting with other 100V 20A dual Schottky diodes in TO-263 packages.
