RBR10BM40AFHTL

Overview

The RBR10BM40AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-252-3 (DPAK) surface-mount package. The device supports a repetitive reverse voltage of 40 V and an average forward current of 10 A. Key electrical parameters include a maximum forward voltage of 620 mV at 5 A, a surge forward current rating of 50 A, and a maximum reverse current of 120 µA at 40 V. It operates within a junction temperature range up to +150 °C and meets the AEC-Q101 automotive qualification standard.

Feature Summary

• Dual anode common cathode configuration for flexible circuit integration
• Automotive-grade reliability certified under AEC-Q101 standards
• Low forward voltage characteristic for improved efficiency
• High thermal stability with a maximum junction temperature of +150 °C

Applications

• General rectification in automotive electronic systems
• Switching power supply circuits requiring high reliability
• DC-DC converter stages in vehicle power management

Procurement Notes

Verify the complete part number including the suffix against official ROHM documentation to ensure correct packaging and tape specifications. Confirm that the required AEC-Q101 automotive qualification aligns with your system's design-in requirements. Cross-reference the TO-252-3 footprint dimensions with your PCB layout guidelines prior to finalizing procurement decisions.

Selection Notes

Select this component when a dual-diode arrangement in a compact SMD package is required for automotive or industrial power applications. The 40 V rating suits low-voltage DC bus applications. Ensure the 10 A continuous current capability matches the load profile. Consider the TO-252-3 thermal performance for your specific heatsinking or board copper area constraints.

Part Context

This component belongs to ROHM's RBR series of Schottky barrier diodes, which are engineered for automotive use. The series offers various current and voltage ratings in standardized packages like DPAK and D2PAK. These devices utilize silicon technology to provide fast switching speeds and low power loss compared to standard PN junction diodes.

Replacement Considerations

Direct substitutes may include other ROHM parts from the same RBR family with identical pinouts and similar electrical ratings, such as the RBR10BM30AFHTL for lower voltage applications. Verify that any alternative maintains the AEC-Q101 qualification and the dual common cathode configuration.