RBR10NS30AFHTL

Overview

The RBR10NS30AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications including automotive electronics. It features a dual anode common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. Key electrical parameters include a maximum repetitive reverse voltage of 30 V and an average rectified forward current of 10 A. The device exhibits a maximum forward voltage of 550 mV at 5 A and a maximum reverse current of 100 uA at 30 V. It supports a forward surge current of 50 A and operates at junction temperatures up to +150 °C. The component is qualified under the AEC-Q101 standard.

Feature Summary

• Dual anode common cathode configuration for efficient circuit design
• Automotive-grade reliability certified to AEC-Q101 standards
• Low forward voltage characteristics for improved efficiency
• High thermal stability with a maximum junction temperature of 150 °C

Applications

• Switching power supplies
• Automotive electronic systems
• General rectification circuits

Procurement Notes

Verify the complete part number including the suffix against official ROHM documentation to ensure correct packaging and specifications. Confirm that the required AEC-Q101 automotive qualification aligns with project requirements. Check the specific datasheet for thermal resistance values and recommended soldering profiles to guarantee proper installation and long-term reliability in the target application environment.

Selection Notes

Select this component when a 30 V rated Schottky diode with 10 A continuous current capability is required in a D2PAK package. The dual anode common cathode structure allows for use in bridge rectifier configurations or synchronous rectification. Ensure the operating environment meets the -55 °C to +150 °C storage temperature range and that the PCB layout accommodates the thermal dissipation needs of the TO-263S footprint.

Part Context

This device belongs to the RBR series of high-reliability Schottky barrier diodes from ROHM Semiconductor. The series is specifically engineered for automotive and industrial applications requiring robust performance under harsh conditions. The NS variant denotes the TO-263S package, distinguishing it from other form factors within the same electrical family. The AFHTL suffix indicates specific taping and reel packaging details.

Replacement Considerations

Direct replacements must match the 30 V rating, 10 A current capacity, and TO-263S package. Verify equivalent AEC-Q101 qualification if automotive use is intended. Consider pin-compatible alternatives from the same manufacturer's RBR series with identical electrical characteristics to ensure seamless integration without redesigning the printed circuit board.