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The RBR10T60ANZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-220FN-3 through-hole package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 60 V and an average forward current rating of 10 A. The device exhibits a low forward voltage drop of 580 mV at 5 A and a maximum reverse leakage current of 300 uA at 60 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 °C.
Verify the specific suffix 'C9' against the official datasheet to confirm packaging details, as suffixes often denote tube or bulk variations. Confirm RoHS compliance status directly from the manufacturer's documentation. Ensure the component meets AEC-Q101 requirements if used in automotive designs. Check for obsolescence notices, as similar models in this series may be marked as not recommended for new designs.
Select this component for applications requiring a robust through-hole Schottky diode with high current handling capabilities. The dual anode common cathode setup is ideal for full-wave rectification without needing multiple discrete components. Consider the thermal management requirements associated with the TO-220FN package when designing for high ambient temperatures or continuous high-load conditions.
This part belongs to ROHM's RBR series of automotive-grade Schottky barrier diodes. These devices are designed specifically for the demanding environment of automotive electronics, offering high reliability and low leakage currents. The series typically includes various voltage and current ratings to suit different power conversion needs within vehicle systems.
Direct substitutes include other ROHM parts in the RB085T-60 or RBR20T60AHZ series, provided the electrical parameters such as current rating and voltage withstand are compatible. Verify pinout compatibility and thermal resistance characteristics before substitution.