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The RBR15BGE40ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252 (D-Pak) surface-mount package. It features a common cathode dual configuration with three terminals. Key electrical specifications include a maximum repetitive reverse voltage of 40V and an average rectified forward current of 15A. The device supports a surge forward current of 100A and exhibits a maximum forward voltage of 0.55V at 7.5A. Operating junction temperature ranges up to 150°C, with a storage temperature range from -55°C to 150°C.
Verify the specific ordering suffix 'TL' against the manufacturer's current documentation to confirm tape-and-reel packaging details. Confirm RoHS compliance status as indicated in official datasheets. Check supply status, as previous variants may have different lifecycle stages. Ensure the package dimensions match the target PCB footprint requirements before finalizing procurement.
Select this component for applications requiring a 40V rated Schottky diode with high current handling capabilities in a compact surface-mount form factor. The low forward voltage drop makes it suitable for efficient power conversion circuits. Verify that the thermal management design accommodates the TO-252 package's heat dissipation characteristics under expected load conditions.
This part belongs to ROHM's series of silicon Schottky barrier diodes designed for general-purpose rectification and switching applications. The TO-252 package provides a balance between current capacity and board space efficiency. These devices are engineered for use in consumer electronics and industrial power supplies where reliability and low conduction losses are critical performance factors.
RBR15BM40A is listed as a similar level replacement with the same pinout and package.