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The RBR15BGE60ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (D-PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 60 V and an average rectified forward current rating of 15 A. The device exhibits a low forward voltage of 0.58 V at 7.5 A and a maximum reverse current of 0.4 mA at 60 V. It supports a peak forward surge current of 100 A and operates at junction temperatures up to +150°C.
Verify the complete part number including the suffix to ensure correct packaging and specifications. Confirm RoHS compliance status through official documentation before integration. Check for any specific handling requirements related to the surface-mount package type during assembly processes.
Select this component for applications requiring high current handling in a compact surface-mount form factor. The 60V rating suits low-voltage DC systems where low forward drop is critical for efficiency. Ensure the PCB layout accommodates the TO-252 package dimensions and thermal dissipation needs.
This component belongs to ROHM's RBR series of Schottky barrier diodes designed for general-purpose use. It is distinct from automotive-grade variants which may carry different qualification standards. The device is intended for standard industrial and consumer electronics rather than specialized automotive environments.
RBR15BGE60A is listed as a recommended replacement with identical pinout and package specifications. Verify that the suffix differences do not impact packaging or electrical characteristics for your specific application requirements.