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The RBR15BM40AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for automotive applications. It features a dual anode common cathode configuration in a TO-252-3 (DPAK) surface-mount package. Key electrical parameters include a maximum repetitive reverse voltage of 40 V and an average rectified forward current of 15 A. The device exhibits a low forward voltage of 510 mV at 7.5 A and a maximum reverse current of 200 uA at 40 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 C. This component meets the AEC-Q101 standard for high reliability.
Verify the complete part number including the suffix HTL to ensure correct packaging and tape-and-reel specifications. Confirm that the TO-252-3 footprint matches the target PCB design. Ensure the application environment remains within the specified temperature range and voltage limits defined in the official datasheet to maintain AEC-Q101 compliance.
Select this component when a dual common cathode Schottky diode is required for automotive circuits. The 15 A current rating and 40 V blocking voltage suit low-voltage, high-current applications. Consider the TO-252-3 package for surface-mount assembly constraints. Verify thermal management requirements given the 150 C maximum junction temperature capability.
This part belongs to the RBR series of automotive Schottky barrier diodes from ROHM Semiconductor. The series emphasizes low forward voltage and high reliability for automotive electronics. The RBR15BM40AFHTL specifically targets applications needing dual-diode functionality in a compact DPAK package, distinguishing it from single-diode variants or higher voltage models in the same family.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's datasheet for recommended alternatives or cross-reference guides.