SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RBR20BGE30ATL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for surface mount applications. It features a dual anode common cathode configuration within a TO-252-3 (D-Pak) package. The device operates with silicon technology and supports a maximum junction temperature of +150°C. Key electrical specifications include a repetitive reverse voltage (Vrrm) of 30 V, an average forward current (If) of 20 A, and a forward voltage (Vf) of 590 mV at 10 A. The component handles a forward surge current (Ifsm) of 100 A and exhibits a reverse current (Ir) of 600 uA.
Verify the specific suffix 'ATL' corresponds to the required tape and reel packaging quantity of 2500 units. Confirm that the standard grade classification aligns with the application requirements, as this series is generally not recommended for automotive equipment unless explicitly certified under AEC-Q101 standards. Ensure compatibility with the TO-252-3 footprint during PCB layout.
Select this component when a 30 V rating and 20 A continuous current capacity are required in a compact SMD form factor. The TO-252-3 package offers a balance between thermal performance and board space efficiency compared to larger packages. Consider the 590 mV forward voltage drop for loss calculations in low-voltage, high-current applications where efficiency is critical.
This part belongs to ROHM's RBR series of Schottky barrier diodes, which are engineered for low forward voltage and high reliability. The RBR20BGE30ATL shares the same pinout and general characteristics as the RBR20BGE30A, with the 'TL' suffix indicating the specific reel packaging format used for automated surface mount assembly processes.
The RBR20BGE30A is the base part number without the specific packaging suffix. For equivalent performance in a TO-252-3 package with similar electrical ratings, verify cross-reference availability from other manufacturers offering 30V, 20A Schottky diodes.