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The RBR20T40ANZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-220FN-3 package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 40V and an average rectified forward current of 20A. The device exhibits a low forward voltage of 0.62V at 10A and a maximum reverse current of 0.24mA at 40V. It supports a forward surge current of 100A and operates at junction temperatures up to +150°C.
Verify the specific suffix C9 against the manufacturer's latest datasheet to confirm packaging details and RoHS compliance status. Ensure the component matches the required thermal management specifications for the intended application environment before finalizing procurement orders.
Select this component when a dual diode arrangement in a single through-hole package is required. The TO-220FN-3 package provides robust mechanical stability and efficient heat dissipation. Consider the 40V rating and 20A current capacity relative to the circuit's peak inverse voltage and load requirements.
This part belongs to ROHM's RBR series of Schottky barrier diodes designed for high-reliability power applications. The series emphasizes low forward voltage drop and fast switching characteristics. The TO-220FN-3 package is standard for medium-power through-hole implementations in industrial and consumer electronics.
Direct substitutes include the RB215T-40HZ and RB218T-40NZ from the same manufacturer family. Verify pinout compatibility and electrical parameters such as forward voltage and reverse leakage current when cross-referencing with other brands' equivalent parts.