RBR20T60ANZC9

Overview

The RBR20T60ANZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for through-hole mounting in the TO-220FN-3 package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 60 V and an average rectified forward current rating of 20 A. The device exhibits a typical forward voltage of 590 mV at 10 A and a maximum reverse current of 600 uA. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 C.

Feature Summary

• Dual anode common cathode configuration for efficient circuit design
• Low forward voltage characteristics to minimize conduction losses
• High reliability construction suitable for demanding environments

Applications

• Automotive power supply circuits requiring AEC-Q101 qualification
• DC-DC converter output rectification stages
• Free-wheeling diodes in inductive load switching applications

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical tolerances and packaging specifications. Ensure that the procurement channel provides valid traceability records for automotive-grade components. Cross-reference the part number with the latest datasheet revisions to confirm compliance with current RoHS directives and material declarations before finalizing orders.

Selection Notes

Select this component when a robust through-hole solution is required for high-current rectification tasks. The TO-220FN-3 package offers superior thermal dissipation compared to smaller surface-mount alternatives. Consider the 60 V rating and 20 A continuous current capability to ensure adequate headroom for system voltage spikes and peak load conditions during operation.

Part Context

This component belongs to ROHM's RBR series of Schottky barrier diodes, which are engineered for high efficiency and reliability. The series is widely utilized in power electronics where low forward voltage drop and fast switching speeds are critical. The specific model integrates advanced semiconductor processing techniques to achieve consistent performance across varying temperature ranges.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with alternative devices by matching key parameters such as package type, current ratings, and voltage specifications against the original design requirements.