RBR30NS30AFHTL

RBR30NS30AFHTL

$1.79
  • Description:DIODE ARRAY SCHOTT 30V 30A LPDS
  • Series:-

SKU:a2b05fba44cf Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY SCHOTT 30V 30A LPDS
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:550 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:300 µA @ 30 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:LPDS
  • Grade:Automotive
  • Qualification:AEC-Q101

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RBR30NS30AFHTL

Overview

The RBR30NS30AFHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for automotive applications under the AEC-Q101 standard. It features a dual anode common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. Key electrical specifications include a maximum repetitive reverse voltage of 30V and an average rectified forward current of 30A. The device exhibits a low forward voltage of 550mV at 15A and supports a forward surge current of 100A. It operates with a maximum junction temperature of +150°C and offers low reverse leakage current characteristics.

Feature Summary

  • Automotive-grade reliability certified to AEC-Q101 standards
  • Dual anode common cathode configuration for efficient circuit design
  • Low forward voltage characteristic to minimize conduction losses
  • High thermal stability with a maximum operating junction temperature of +150°C

Applications

  • General rectification in automotive electronic systems
  • Power supply circuits requiring high reliability
  • Freewheeling diode applications in switching regulators

Procurement Notes

Verify the complete part number including the suffix HTL against official ROHM documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the AEC-Q101 qualification status aligns with specific automotive project requirements. Cross-reference the TO-263S package dimensions with target PCB layout constraints to ensure mechanical compatibility during assembly.

Selection Notes

Select this component when a 30V rated Schottky diode with 30A continuous current capability is required for automotive environments. The dual common cathode structure allows for use in bridge or synchronous rectifier topologies. Ensure the application's peak reverse voltage does not exceed the 30V rating and that thermal management supports the 150°C junction limit. Compare forward voltage drops against alternative packages if space constraints differ.

Part Context

This device belongs to the RBR series of automotive-grade Schottky barrier diodes from ROHM Semiconductor. The series is engineered to balance low forward voltage and low reverse leakage current, making it suitable for high-efficiency power conversion. The RBR30NS30AFHTL specifically targets applications demanding robust performance in harsh automotive electrical environments while maintaining compact surface-mount form factors.

Replacement Considerations

The part number alias RBR30NS30AFH refers to the same device family without the specific tape-and-reel suffix. Verify pinout compatibility and thermal resistance values when substituting with other TO-263 packaged Schottky diodes from different manufacturers.

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