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The RBR30T40ANZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for through-hole mounting in the TO-220FN-3 package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 40V and an average forward current rating of 30A. The device exhibits a low forward voltage of 550mV at 15A and a maximum reverse current of 300uA. It supports a forward surge current of 100A and operates at junction temperatures up to +150°C.
Verify the exact part number against official ROHM documentation, as the provided input model differs from verified listings. Confirm package type and electrical ratings match system requirements. Check RoHS compliance status and lead times directly with authorized distributors. Ensure thermal management solutions align with the specified operating temperature range.
Select this component for applications requiring high current handling with low voltage drop. The TO-220FN-3 package offers robust thermal performance for through-hole assembly. Consider the dual anode configuration if common cathode topology is required. Verify that the 40V reverse voltage rating exceeds peak inverse voltages in the target circuit.
This component belongs to ROHM's RBR series of Schottky barrier diodes, which are engineered for low forward voltage and high reliability. The series utilizes silicon technology and is available in various packages including TO-220FN variants. These diodes are commonly used in industrial and consumer power electronics where efficiency and durability are critical.
Publicly confirmed substitute part numbers for this specific model were not identified in the provided data. Cross-referencing with similar ROHM models such as RBR30T30ANZ or RB205T-40NZ requires careful verification of voltage and current ratings to ensure functional compatibility.