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RD3L03BATTL1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is PCH -60V -35A POWER MOSFET - RD3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RD3L03BATTL1
- Description：PCH -60V -35A POWER MOSFET - RD3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1930 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：56W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for RD3L03BATTL1
Single FETs, MOSFETs Overview
The RD3L03BATTL1 is a P-channel power MOSFET manufactured by ROHM Semiconductor, designed for surface-mount applications in the TO-252 (DPAK) package. It features a drain-source voltage rating of -60V and a continuous drain current of -35A. The device exhibits a typical on-resistance of 0.036 ohms at a gate-source voltage of 4.5V and 0.032 ohms at 10V. Key electrical characteristics include a total gate charge of 18.5 nC and a power dissipation capacity of 56W. The component operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for efficient power switching
- Fast switching speed capabilities
- Simplified drive circuit requirements
- Facilitates easy parallel operation
Single FETs, MOSFETs Applications
- General-purpose switching applications
- Power management circuits
- DC-DC converter stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix TL1 indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor datasheets prior to integration. Ensure the ordering part number matches the exact electrical specifications required for the target design to avoid compatibility issues with existing inventory or alternative components.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a single P-channel switch with moderate current handling in a DPAK footprint. Evaluate thermal performance based on the 56W dissipation rating under actual operating conditions. Consider the gate threshold and charge parameters for driver compatibility. This standard-grade device is not recommended for automotive equipment applications according to manufacturer guidelines.
Single FETs, MOSFETs Part Context
This part belongs to the RD3L series of power MOSFETs from ROHM Semiconductor. The series utilizes silicon technology and is optimized for general switching tasks. The TO-252-3 package provides a balance between current capacity and board space efficiency. The product is classified as a standard-grade transistor suitable for industrial and consumer electronics rather than specialized high-reliability sectors.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same RD3L family that may offer different current ratings or resistance values. Verify pinout compatibility if replacing with devices from other manufacturers. Ensure any alternative component meets the same voltage and thermal constraints.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
