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Product Detailed Parameters
- Description：MOSFET P-CH 50V 30A
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RF1S30P05 is a Power Field-Effect Transistor manufactured by Harris Corporation. It is a single-element, N-channel, silicon metal-oxide semiconductor FET housed in a TO-263AB package. The device features a minimum drain-source breakdown voltage of 50 V and a maximum continuous drain current of 30 A. Its maximum drain-source on-resistance is specified at 0.065 ohms. The component operates in enhancement mode and utilizes a plastic/epoxy rectangular small outline body with gull wing terminals.
Feature Summary
- N-channel silicon MOSFET technology for power switching applications
- Logic level compatible operation for direct drive compatibility
- Integrated built-in diode configuration within the single element structure
Applications
- High current power conversion circuits
- Chassis mount power management systems
- DC filter choke driver stages
Procurement Notes
Verify the specific suffix designation against official Harris documentation to confirm exact electrical tolerances and pinout configurations. Ensure the procurement source provides authentic datasheets matching the TO-263AB package style. Cross-reference the manufacturer part number with current product line matrices to validate availability and technical specifications before finalizing orders.
Selection Notes
Select this component when a 50 V rated N-channel MOSFET with 30 A current handling capability is required. The low on-resistance value supports efficient power dissipation in high-current scenarios. The logic level compatibility simplifies gate drive circuit design. Verify that the thermal requirements of the application align with the capabilities of the TO-263AB surface mount package.
Part Context
This device belongs to the Harris RF1S series of power MOSFETs designed for robust performance in demanding electronic environments. The series includes various voltage and current ratings optimized for different power levels. The RF1S30P05 specifically targets applications requiring moderate voltage blocking with substantial current capacity, fitting into the 50 V segment of the product matrix.
Replacement Considerations
Consult the official Harris RF1S Series Product Matrix for verified substitutes. Potential alternatives within the same series include the RF1S45N06SM or RF1S50N06LESM, provided their voltage and current ratings meet the specific circuit requirements. Always verify pin compatibility and thermal characteristics before substitution.
