RF1S45N02LSM9A

$0.54

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Harris Corporation
Package：Bulk

SKU:a12a007ce42e Category: Single FETs, MOSFETs Brand: Harris Corporation

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Product introduction

RF1S45N02LSM9A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RF1S45N02LSM9A

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Harris Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for RF1S45N02LSM9A

RF1S45N02LSM9A

Single FETs, MOSFETs Overview

The RF1S45N02LSM9A is a single N-channel power MOSFET manufactured by Harris Corporation. It features a TO-263AB (D2PAK) surface-mount package with three terminals. The device is designed for high-voltage switching applications, offering a drain-source breakdown voltage of 200V and a continuous drain current of 45A. Key electrical characteristics include a maximum on-resistance of 0.045 ohms and a logic-level gate threshold compatible with standard digital interfaces. The component operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Radiation hardened construction suitable for harsh environments
Logic level gate drive compatibility for direct microcontroller interfacing
Integrated body diode for inductive load switching
Flange mount or surface mount capability via D2PAK package

Single FETs, MOSFETs Applications

Radiation-tolerant power conversion systems
High-reliability motor control circuits
Spacecraft power distribution units
Industrial inverters requiring radiation resistance

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '9A' against the manufacturer's official datasheet to confirm radiation hardening status and pinout configuration. Ensure the ordering part number matches the exact JEDEC package code TO-263AB. Cross-reference the RoHS compliance status as older Harris components may not meet current environmental standards. Confirm thermal management requirements for the specified 45A current rating.

Single FETs, MOSFETs Selection Notes

Select this component when radiation hardness is a primary design constraint alongside high current handling. Compare the 0.045 ohm on-resistance against alternative 200V MOSFETs to evaluate conduction losses. Consider the TO-263AB package for its balance of thermal dissipation and PCB space efficiency. Verify that the logic-level gate drive requirements align with the system's control voltage levels.

Single FETs, MOSFETs Part Context

This part belongs to the Harris RF1S series of radiation-hardened power MOSFETs. The series is characterized by enhanced reliability for aerospace and defense applications. The RF1S45N02LSM9A specifically targets applications requiring robust performance under ionizing radiation exposure while maintaining standard logic interface compatibility.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 200V/45A rating and TO-263AB package. Verify radiation tolerance specifications if operating in space or high-altitude environments. Check for equivalent on-resistance and gate charge parameters to ensure circuit compatibility without redesign.