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The RF1S50N06SM9AS2551 is a single-element N-channel silicon power MOSFET manufactured by Harris Corporation. It operates in enhancement mode within a TO-263AB surface-mount package. The device specifies a maximum drain current of 50 A and a minimum drain-source breakdown voltage of 60 V. Its maximum on-resistance is rated at 0.022 ohms. The component features logic level compatibility for efficient gate drive requirements.
Verify the specific suffix '9AS2551' against official Harris or Intersil documentation to confirm exact tape-and-reel specifications, as standard datasheets may only list the base part number RF1S50N06SM. Ensure the manufacturer lineage is correctly identified given the corporate history involving Harris, Fairchild, and Renesas.
Select this component when a 60V rating with 50A continuous current capability is required. The low on-resistance supports high-efficiency designs. Verify that the TO-263AB footprint matches the target PCB layout and that the thermal management strategy accommodates the specified power dissipation limits.
This device belongs to the RF1S series of power MOSFETs from Harris Corporation. The series includes various voltage and current ratings optimized for different power levels. This specific model represents a mid-range option within the 60V category, balancing conduction losses with switching performance.
RF1S50N06SM
Yes, the component is documented as logic level compatible.
It utilizes the TO-263AB small outline package.