RF1S50N06SM9AS2551

RF1S50N06SM9AS2551

$0.88
  • Description:MOSFET 60V 50A
  • Series:*

SKU:257edcc20282 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 60V 50A
  • Series:*
  • Mfr:Harris Corporation
  • Package:Bulk
  • Technology:-
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Download product information

RF1S50N06SM9AS2551

Overview

The RF1S50N06SM9AS2551 is a single-element N-channel silicon power MOSFET manufactured by Harris Corporation. It operates in enhancement mode within a TO-263AB surface-mount package. The device specifies a maximum drain current of 50 A and a minimum drain-source breakdown voltage of 60 V. Its maximum on-resistance is rated at 0.022 ohms. The component features logic level compatibility for efficient gate drive requirements.

Feature Summary

  • Logic level compatible gate structure
  • Single element N-channel configuration
  • Surface mount TO-263AB packaging

Applications

  • Power switching circuits
  • DC-DC converter stages
  • Motor control applications

Procurement Notes

Verify the specific suffix '9AS2551' against official Harris or Intersil documentation to confirm exact tape-and-reel specifications, as standard datasheets may only list the base part number RF1S50N06SM. Ensure the manufacturer lineage is correctly identified given the corporate history involving Harris, Fairchild, and Renesas.

Selection Notes

Select this component when a 60V rating with 50A continuous current capability is required. The low on-resistance supports high-efficiency designs. Verify that the TO-263AB footprint matches the target PCB layout and that the thermal management strategy accommodates the specified power dissipation limits.

Part Context

This device belongs to the RF1S series of power MOSFETs from Harris Corporation. The series includes various voltage and current ratings optimized for different power levels. This specific model represents a mid-range option within the 60V category, balancing conduction losses with switching performance.

Replacement Considerations

RF1S50N06SM

FAQ

Is the RF1S50N06SM9AS2551 logic level compatible?

Yes, the component is documented as logic level compatible.

What is the package type for this transistor?

It utilizes the TO-263AB small outline package.

RF1S50N06SM9AS2551RF1S50N06SM9AS2551
$0.88
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