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Product Detailed Parameters
- Description：RF TRANS NPN 12V 7GHZ SOT-23
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：7GHz
- Noise Figure (dB Typ @ f)：1.1dB @ 1GHz
- Gain：12.5dB
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：130 @ 20mA, 10V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The RF3356-TP is an NPN silicon RF bipolar transistor manufactured by Micro Commercial Components (MCC). It operates with a collector-emitter voltage of 12 V, collector-base voltage of 20 V, and emitter-base voltage of 3 V. The device supports a maximum collector current of 100 mA and power dissipation of 150 mW at 25°C. Key electrical characteristics include a transition frequency of 7 GHz, DC current gain ranging from 130 to 300, and a noise figure as low as 1.1 dB. It is housed in a SOT-23 package.
Feature Summary
- High power gain suitable for RF applications
- Low noise figure for signal integrity
- High cut-off frequency for wideband operation
Applications
- RF wideband amplifiers
- RF oscillators
Procurement Notes
Verify the authenticity of the RF3356-TP component by purchasing directly from Micro Commercial Components or their authorized distributors. Counterfeit parts pose significant risks; ensure traceability and compliance with MCC quality standards. Confirm that the ordering suffix -TP indicates RoHS compliance and tape-and-reel packaging containing 3,000 pieces per reel before finalizing acquisition.
Selection Notes
Select the RF3356-TP when designing circuits requiring high-frequency performance with low noise characteristics. Ensure the operating conditions remain within the specified limits of 12 V collector-emitter voltage and 100 mA collector current. Consider the thermal resistance of 833 °C/W and the SOT-23 package constraints for proper heat dissipation and board layout integration.
Part Context
The RF3356-TP belongs to the RF3356 series of NPN RF transistors produced by Micro Commercial Components. It is designed specifically for radio frequency applications, offering a balance of high gain and low noise. The device utilizes silicon technology and is packaged in a compact SOT-23 form factor, making it suitable for space-constrained electronic designs requiring reliable RF signal processing.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative components, ensuring equivalent electrical parameters such as transition frequency and voltage ratings are met.
FAQ
What is the transition frequency of the RF3356-TP?
The transition frequency (fT) of the RF3356-TP is 7 GHz.
What is the maximum power dissipation rating?
The maximum power dissipation is 150 mW at an ambient temperature of 25°C.
Does the RF3356-TP meet RoHS standards?
Yes, the 'TP' suffix designates that the device is RoHS compliant and features lead-free finish.
