ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS NPN 18V 6GHZ SOT-23
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：18V
- Frequency - Transition：6GHz
- Noise Figure (dB Typ @ f)：-
- Gain：10dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：130 @ 20mA, 10V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
Download product information
Overview
The RF3358-TP is an NPN silicon RF transistor manufactured by Micro Commercial Components (MCC) in a SOT-23 package. It features a collector-base voltage of 25 V, collector-emitter voltage of 18 V, and emitter-base voltage of 3 V. The device supports a maximum collector current of 100 mA with a power dissipation of 200 mW at 25°C. Electrical characteristics include a transition frequency of 6 GHz, DC current gain ranging from 130 to 300, and a power gain of 10 dB at 1 GHz. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- High power gain suitable for RF applications
- Low noise figure for signal integrity
- High cut-off frequency supporting wideband operations
Applications
- RF wideband amplifiers
- Oscillators
Procurement Notes
Verify the authenticity of the RF3358-TP component by purchasing directly from Micro Commercial Components or their authorized distributors. Counterfeit parts pose significant risks; ensure traceability and compliance with MCC quality standards. Confirm that the ordering suffix indicates RoHS compliance and check the specific packing quantity requirements for tape and reel orders before finalizing procurement.
Selection Notes
Select the RF3358-TP when designing circuits requiring high transition frequency and low noise performance in an SOT-23 footprint. Ensure the design operates within the specified 200 mW power dissipation limit and maintains the junction temperature between -55°C and +150°C. Verify that the required DC current gain and power gain meet the specific amplifier or oscillator specifications.
Part Context
The RF3358-TP belongs to the RF3358 series of NPN RF transistors produced by Micro Commercial Components. It is designed for high-frequency applications utilizing silicon technology. The component is packaged in a standard SOT-23 surface-mount case, facilitating integration into compact electronic designs requiring reliable RF performance.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the transition frequency of the RF3358-TP?
The transition frequency (fT) is 6 GHz.
What is the maximum power dissipation rating?
The maximum power dissipation is 200 mW at an ambient temperature of 25°C.
Does the RF3358-TP comply with RoHS standards?
Yes, the 'P' suffix designation indicates that the device is RoHS compliant.
