RF3S49092SM9A

RF3S49092SM9A

$2.39
  • Description:MOSFET N/P-CH 12V 20A TO263-5
  • Series:-

SKU:3c4c1810fcc7 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 12V 20A TO263-5
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc), 10A (Tc)
  • Rds On (Max) @ Id, Vgs:60mOhm @ 20A, 5V, 140mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V, 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:750pF @ 10V, 775pF @ 10V
  • Power - Max:50W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
  • Supplier Device Package:TO-263-5
  • Grade:-
  • Qualification:-

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RF3S49092SM9A

Overview

The RF3S49092SM9A is a dual-channel metal-oxide semiconductor field-effect transistor (MOSFET) manufactured by Fairchild Semiconductor, now part of ON Semiconductor. The device integrates N-channel and P-channel configurations within a single package. It supports a maximum continuous drain current of 20 A and handles an absolute maximum power dissipation of 50 W. The component is designed for surface-mount applications and operates at temperatures up to 175 °C.

Feature Summary

  • Integrates complementary N-channel and P-channel MOSFETs in a single package
  • Supports high thermal operation with a maximum junction temperature of 175 °C
  • Designed for surface-mount technology (SMT) assembly

Applications

  • Power management circuits requiring complementary switching
  • Motor control applications utilizing dual-channel configurations
  • High-efficiency DC-DC converter topologies

Procurement Notes

Verify the manufacturer lineage, as Fairchild Semiconductor's discrete semiconductor division was acquired by ON Semiconductor. Confirm that the specific suffix SM9A corresponds to the intended pinout and packaging variant. Ensure compliance requirements are checked against the original documentation, noting historical lead-tin plating specifications found in legacy databases.

Selection Notes

Select this component when a compact solution for complementary switching is required. The integrated dual-channel design reduces board space compared to using separate N-channel and P-channel devices. Verify that the 20 A current rating and 50 W power dissipation capabilities align with the thermal management strategy of the target application.

Part Context

This component belongs to the RF3S series of dual MOSFETs. These devices are engineered to provide matched electrical characteristics for both N-type and P-type channels. The series is commonly utilized in power electronics where space constraints necessitate the integration of complementary switching elements into a single footprint.

Replacement Considerations

Direct replacements include other dual N/P-channel MOSFETs from ON Semiconductor or Fairchild with identical pinouts and similar current ratings. Verify package dimensions and thermal resistance values before substitution.

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