RF5L15120CB4

RF5L15120CB4

  • Description:RF MOSFET LDMOS 50V LBB
  • Series:-

SKU:8201babc37de Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V LBB
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:1.5GHz
  • Gain:20dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1µA
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:120W
  • Voltage - Rated:95 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:LBB
  • Supplier Device Package:LBB
  • Configuration:-

Download product information

RF5L15120CB4

Overview

The RF5L15120CB4 is a dual N-channel silicon LDMOS transistor manufactured by STMicroelectronics, designed for high-frequency applications ranging from HF to 1.5 GHz. It delivers an output power of 120 W with a gain of 20 dB. The device features a drain-source breakdown voltage (Vds) of 95 V and a continuous drain current (Id) of 2.5 A. The on-resistance (Rds(on)) is 1 Ohm, with a gate-source threshold voltage (Vgs(th)) of 2.8 V. Operating temperatures reach up to +200°C. It is housed in an LBB-5 surface-mount package and supports Class AB/B and Class C modulation formats.

Feature Summary

  • Integrated electrostatic discharge (ESD) protection mechanisms
  • High efficiency combined with linear gain operations
  • Wide positive and negative gate-to-source voltage tolerance
  • Superior thermal stability with low hot carrier injection drift

Applications

  • Broadband commercial communications systems
  • Television broadcast infrastructure
  • Avionics equipment
  • Industrial application modules

Procurement Notes

Verify the Not Recommended for New Design (NRND) status before initiating procurement. Confirm availability through authorized distributors as standard production may be limited. Ensure compliance with RoHS directives and humidity sensitivity handling requirements during storage and assembly processes.

Selection Notes

Select this component for designs requiring operation across HF to 1.5 GHz bands with 120 W output capability. Consider the dual N-channel configuration for balanced circuit topologies. Evaluate the LBB-5 package suitability for the target PCB layout and thermal management strategy.

Part Context

This part belongs to the STMicroelectronics RF power LDMOS transistor family. It shares common design principles with other devices in the series but is distinct due to its specific frequency range and dual-channel architecture. The component targets broadband applications rather than narrowband fixed-frequency uses.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

RF5L15120CB4RF5L15120CB4

Click on the inquiry