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The RF5L15120CB4 is a dual N-channel silicon LDMOS transistor manufactured by STMicroelectronics, designed for high-frequency applications ranging from HF to 1.5 GHz. It delivers an output power of 120 W with a gain of 20 dB. The device features a drain-source breakdown voltage (Vds) of 95 V and a continuous drain current (Id) of 2.5 A. The on-resistance (Rds(on)) is 1 Ohm, with a gate-source threshold voltage (Vgs(th)) of 2.8 V. Operating temperatures reach up to +200°C. It is housed in an LBB-5 surface-mount package and supports Class AB/B and Class C modulation formats.
Verify the Not Recommended for New Design (NRND) status before initiating procurement. Confirm availability through authorized distributors as standard production may be limited. Ensure compliance with RoHS directives and humidity sensitivity handling requirements during storage and assembly processes.
Select this component for designs requiring operation across HF to 1.5 GHz bands with 120 W output capability. Consider the dual N-channel configuration for balanced circuit topologies. Evaluate the LBB-5 package suitability for the target PCB layout and thermal management strategy.
This part belongs to the STMicroelectronics RF power LDMOS transistor family. It shares common design principles with other devices in the series but is distinct due to its specific frequency range and dual-channel architecture. The component targets broadband applications rather than narrowband fixed-frequency uses.
No public confirmed substitute part numbers are available in the provided documentation.