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Product Detailed Parameters
- Description：DIODE ARRAY GP 800V 10A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：800 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：2.1 V @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：40 ns
- Current - Reverse Leakage @ Vr：10 µA @ 800 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：-
- Qualification：-
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Overview
The RFN10NS8DFHTL is a high-reliability ultra-fast recovery diode manufactured by ROHM Semiconductor. It features an 800V reverse voltage rating and supports a 10A average rectified forward current. The device utilizes a TO-263S (D2PAK) surface-mount package with three terminals. Key electrical characteristics include a maximum forward voltage of 2.1V at 5A, a maximum reverse current of 0.01mA at 800V, and a maximum reverse recovery time of 40ns at 500mA. It complies with RoHS standards.
Feature Summary
- Ultra-fast recovery performance for efficient switching applications
- High reliability construction suitable for general rectification
- Surface-mount design in a compact D2PAK package
Applications
- General purpose rectification circuits
- High-frequency power supply designs
- Automotive electronic systems requiring robust diode protection
Procurement Notes
Verify the complete part number including the suffix to ensure correct packaging configuration. Confirm that the TO-263S footprint matches the target PCB layout. Check current availability status as manufacturing schedules may vary. Ensure compliance with specific project requirements regarding RoHS directives and automotive qualification standards before finalizing procurement orders.
Selection Notes
Select this component when an 800V blocking capability is required alongside high current handling. The 40ns reverse recovery time makes it suitable for high-frequency operations where switching losses must be minimized. Consider the thermal management capabilities of the TO-263S package for heat dissipation in dense circuit layouts.
Part Context
This component belongs to ROHM's lineup of ultra-fast recovery diodes designed for demanding power electronics applications. It serves as a specialized solution for replacing standard fast recovery diodes in circuits requiring lower reverse recovery charge and faster switching speeds. The device is engineered to provide improved efficiency in modern power conversion topologies.
Replacement Considerations
Direct substitutes should match the 800V reverse voltage, 10A current rating, and TO-263S package. Verify that alternative components meet or exceed the 40ns reverse recovery time specification. Ensure pinout compatibility and thermal resistance characteristics align with the original design constraints.
