Single FETs, MOSFETs RFP15N12 product image

RFP15N12

$1.19
  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk

SKU:051fd0f85571 Category: Brand:

  
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RFP15N12 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RFP15N12

  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):120 V
  • Current - Continuous Drain (Id) @ 25°C:15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:150mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):75W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for RFP15N12

RFP15N12

Single FETs, MOSFETs Overview

The RFP15N12 is an N-channel power MOSFET manufactured by Harris Corporation. It features a drain-to-source voltage rating of 120 V and a continuous drain current of 15 A at case temperature. The device utilizes metal-oxide semiconductor technology and is housed in a TO-220-3 through-hole package. Key electrical characteristics include a maximum on-resistance of 0.14 ohms and a feedback capacitance of 180 pF. The component supports an operating junction temperature range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • N-channel enhancement mode operation
  • Integrated built-in diode configuration
  • Flange mount or through-hole mounting options

Single FETs, MOSFETs Applications

  • Power switching circuits
  • DC-DC converter topologies
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version for the RFP15N12, as historical Harris components may have varying documentation standards. Confirm RoHS compliance status, as original manufacturing records indicate non-compliance with certain modern environmental directives. Ensure the TO-220-3 package variant matches the required thermal and mechanical specifications for the target assembly process.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 120 V blocking capability and 15 A continuous current handling. The TO-220-3 package facilitates efficient heat dissipation for high-power scenarios. Consider the 0.14 ohm on-resistance for conduction loss calculations. Verify that the single FET configuration with a built-in diode meets the circuit topology requirements without needing external freewheeling diodes.

Single FETs, MOSFETs Part Context

This part belongs to the RFP series of single FETs produced by Harris Corporation. The series includes various voltage ratings, such as the RFP15N06 (60 V) and RFP15N12 (120 V). These devices are silicon-based metal-oxide semiconductor field-effect transistors designed for general-purpose power switching applications. The RFP15N12 specifically targets higher voltage requirements within the 15 A current class.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 120 V, 15 A, N-channel specification in a TO-220-3 package. Verify pinout compatibility and thermal resistance values before substitution.

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