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RFP8P05 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 50V 8A TO220-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RFP8P05
- Description：MOSFET P-CH 50V 8A TO220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：300mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 20 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for RFP8P05
Single FETs, MOSFETs Overview
The RFP8P05 is a P-Channel power MOSFET manufactured using the MegaFET process, designed for applications such as switching regulators and motor drivers. It features a drain-to-source voltage (V_DSS) of -50 V, a continuous drain current (I_D) of -8 A, and a maximum on-resistance (r_DS(ON)) of 0.300 Ω at V_GS = -10 V. The device operates within a junction temperature range of -55°C to 175°C and utilizes a TO-220AB package.
Single FETs, MOSFETs Feature Summary
- Nanosecond switching speeds with linear transfer characteristics
- High input impedance suitable for direct IC drive
- Unclamped inductive switching (UIS) capability
Single FETs, MOSFETs Applications
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer origin, as the datasheet indicates Fairchild Semiconductor production prior to corporate restructuring. Confirm the specific package variant matches the required thermal and mechanical constraints. Ensure the component status aligns with long-term availability requirements, noting that legacy documentation may reflect discontinued manufacturing lines.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, high-current DC-DC conversion or load switching where fast switching transitions are critical. The TO-220AB package provides robust thermal dissipation capabilities for moderate power levels. Evaluate the gate charge requirements against the driving circuit's output current capability to ensure optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the MegaFET family of P-Channel MOSFETs, characterized by optimized silicon utilization for high performance. It serves as a through-hole alternative to surface-mount variants like the RFD8P05SM, offering similar electrical specifications but with different mounting and thermal management considerations for industrial and consumer electronics designs.
Single FETs, MOSFETs Replacement Considerations
Direct replacements include the RFD8P05SM for surface mount applications. Verify pinout compatibility and thermal resistance values when substituting packages. Cross-reference with other -50V P-Channel MOSFETs ensuring identical r_DS(ON) and I_D ratings.
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