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The RGA80TSX2EHRC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for automotive and industrial applications. It features a 1200 V collector-emitter breakdown voltage (BV_CES) and a continuous collector current of 69 A at 100°C. The device incorporates an integrated Fast Recovery Diode (FRD) and offers a minimum short-circuit withstand time of 10 µs. Key electrical parameters include a typical collector-emitter saturation voltage (V_CE(sat)) of 1.6 V and a typical reverse recovery time (t_f) of 161 ns. It operates within a junction temperature range of -55°C to 175°C and is housed in a TO-247N package.
Verify the specific suffix 'C11' against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure the component meets the required AEC-Q101 automotive grade specifications for the intended application environment. Cross-reference the part number with authorized distributors to confirm authenticity and traceability before procurement.
Select this component when a 1200 V rating and 69 A current capacity are required for automotive-grade inverters or heaters. The 10 µs short-circuit tolerance provides robust protection against fault conditions. Consider the TO-247N package for through-hole mounting and thermal management requirements in compact power electronics designs.
This part belongs to the RGA series of ROHM's Field Stop Trench IGBTs, which are optimized for automotive applications such as electric compressors and high-voltage heaters. The series emphasizes low switching and conduction losses while maintaining high reliability through AEC-Q101 qualification. The RGA80TSX2EHRC11 specifically targets applications requiring 1200 V blocking capability and integrated freewheeling diodes.
Direct substitutes within the same family include RGA80TRX2EHRC15 and RGA80TSX2HRC11. Verify pin compatibility and thermal performance before substitution. Other RGA series variants may offer different current ratings or package options.