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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 30A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 30A
- Power - Max：54 W
- Switching Energy：770µJ (on), 1.11mJ (off)
- Input Type：Standard
- Gate Charge：68 nC
- Td (on/off) @ 25°C：44ns/186ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：58 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGCL60TK60DGC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for low VCE(sat) performance. It features an integrated Fast Recovery Diode (FRD) and is housed in a TO-3PFM package. The device supports a collector-emitter voltage of 600V and a continuous collector current of 30A at 100°C. Key electrical parameters include a typical saturation voltage of 1.4V and a reverse recovery time of approximately 178ns. The component operates within a junction temperature range of -40°C to 175°C and complies with RoHS standards.
Feature Summary
- Field Stop Trench technology for optimized switching characteristics
- Integrated Fast Recovery Diode (FRD) for simplified circuit design
- Low Collector-Emitter Saturation Voltage for reduced conduction losses
Applications
- Industrial motor drives
- Uninterruptible Power Supplies (UPS)
- High-frequency power supplies
Procurement Notes
Verify the specific ordering suffix and packaging configuration against official ROHM documentation before procurement. Confirm that the TO-3PFM package dimensions align with the target PCB footprint and thermal management requirements. Ensure compliance with relevant environmental directives such as RoHS for the intended market application.
Selection Notes
Select this component when low conduction loss is prioritized over ultra-fast switching speeds. The integrated FRD eliminates the need for external anti-parallel diodes. Compare the 600V rating and 30A current capacity against system load requirements. Consider the thermal resistance of the TO-3PFM package for heat dissipation calculations in the final design.
Part Context
This part belongs to ROHM's RGCL series of low VCE(sat) IGBTs. It utilizes field stop trench technology to achieve improved efficiency compared to standard planar devices. The integration of the FRD distinguishes it from discrete IGBT modules, offering a compact solution for medium-power applications requiring high reliability and low thermal stress.
Replacement Considerations
The RGW60TK65DGVC11 is a documented alternative from the same manufacturer. Verify compatibility regarding voltage ratings, current capabilities, and package pinout alignment before substitution.
