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The RGCL60TK60GC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-3PFM package. It features a low VCE(sat) type design with an integrated Fast Recovery Diode (FRD). The device supports a collector-emitter voltage of 600V and a continuous collector current of 30A at 100°C. Key electrical parameters include a typical VCE(sat) of 1.4V and a typical turn-off time (tf) of 178ns. The maximum power dissipation is rated at 111W, with an operating temperature range from -55°C to 175°C.
Verify the specific suffix GC11 against official datasheets to confirm packaging details and compliance status. Ensure that ordering quantities align with manufacturer minimums and standard tube configurations. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component for applications requiring low conduction losses and integrated freewheeling diodes. The TO-3PFM package provides robust thermal management for high-power density designs. Consider the trade-off between the low saturation voltage and the moderate switching speed when designing for efficiency versus frequency requirements.
This part belongs to ROHM's CL series, which focuses on low VCE(sat) performance. It is distinct from the W series, which prioritizes high-speed switching. The RGCL60TK60GC11 shares the TO-3PFM form factor with other high-current modules but offers specific electrical characteristics tailored for low-loss conduction applications.
The RGW60TK65DGVC11 is a potential alternative within the same manufacturer portfolio, offering similar voltage ratings and packaging. Verify compatibility regarding switching speeds and thermal resistance when substituting components in existing designs.