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The RGCL80TK60DGC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for low saturation voltage applications. It features an integrated Fast Recovery Diode (FRD) and is housed in a TO-3PFM package with three pins. The device supports a collector-emitter breakdown voltage of 600V and a continuous collector current of 40A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.4V and a reverse recovery time of 178ns. The component operates within a junction temperature range of -40°C to +175°C and has a power dissipation rating of 111W.
Verify the specific suffix DGC11 against the manufacturer's latest datasheet to confirm pinout and packaging details. Ensure compatibility with thermal management requirements given the 111W dissipation rating. Check for RoHS compliance status as per current regulatory standards before integration into final products.
Select this component when low Vce(sat) is critical for efficiency in 600V applications. Compare the 40A current rating and 178ns reverse recovery time against system switching frequency requirements. Consider the TO-3PFM package size for PCB layout constraints and thermal resistance calculations relative to alternative packages like TO-247.
This part belongs to ROHM's RGCL series, which focuses on low saturation voltage performance. It complements other models in the RGTH and RGW series, offering a balance between conduction loss reduction and switching speed suitable for general-purpose industrial and consumer power electronics.
Potential substitutes include the RGCL60TS60DGC11 for lower current requirements or the RGW80TK65EGVC11 for higher voltage tolerance. Verify pin compatibility and thermal characteristics before substitution.