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The RGCL80TK60GC11 is a field stop trench IGBT from ROHM Semiconductor, packaged in TO-247GE. It features a collector-emitter breakdown voltage of 600V and a continuous collector current of 80A at 100°C. The typical collector-emitter saturation voltage is 1.4V, with a maximum gate-emitter voltage of ±20V. Power dissipation reaches 350W, and the storage temperature range spans from -55°C to 175°C. The device incorporates an integrated fast recovery diode and complies with RoHS standards.
Verify the specific suffix GC11 against official ROHM documentation to confirm package type and compliance status. Confirm lead times and minimum order quantities directly with authorized distributors or the manufacturer before placing orders. Ensure the component meets all required environmental and safety certifications for the intended application.
Select this component for applications requiring high current handling at 600V with low conduction losses. Compare the 1.4V Vce(sat) and 80A Ic ratings against system thermal constraints. Verify that the TO-247GE package fits the PCB layout and heatsinking requirements. Check if the integrated FRD meets reverse recovery specifications for the target circuit topology.
This part belongs to ROHM's CL series, characterized by low collector-emitter saturation voltage. It utilizes field stop trench IGBT technology to optimize switching performance and conduction efficiency. The series is designed for general-purpose power electronics applications where high reliability and low loss are critical.
Direct substitutes may include other 600V, 80A field stop trench IGBTs in TO-247 packages from ROHM or other manufacturers. Verify pin compatibility, electrical parameters, and thermal resistance before substitution. Cross-reference datasheets to ensure equivalent switching speeds and safe operating area coverage.