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The RGCL80TS60GC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247N package. It features a collector-emitter voltage (VCES) of 600V and a continuous collector current (IC) of 40A at 100°C case temperature. The typical collector-emitter saturation voltage (VCE(sat)) is 1.4V at IC=40A and VGE=15V. Power dissipation reaches 148W at TC=25°C. Operating junction temperature ranges from -40 to +175°C, with storage temperatures between -55 and +175°C.
Verify the specific ordering suffix C11 corresponds to tube packaging with a basic ordering unit of 450 pieces. Confirm that the component meets RoHS compliance standards and utilizes lead-free plating as specified in the datasheet. Ensure the procurement channel provides the original manufacturer documentation for quality assurance.
Select this component for applications requiring low conduction losses and soft switching characteristics within a 600V rating. Evaluate thermal management requirements based on the 148W power dissipation limit at 25°C case temperature. Consider the 1.01°C/W thermal resistance for heatsink design to maintain junction temperature within the specified operating range.
This device belongs to ROHM's Field Stop Trench IGBT lineup, designed for general electronic equipment including AV/OA devices, communication systems, and consumer electronics. It serves as a high-efficiency switching element suitable for power conversion circuits where reduced saturation voltage improves overall system performance.
Direct substitutes must match the 600V VCES, 40A IC rating, and TO-247N package. Verify compatibility regarding VCE(sat) specifications and switching times to ensure equivalent circuit behavior without redesigning gate drive or thermal interfaces.
The maximum pulsed collector current (ICP) is 160A, limited by the maximum junction temperature.
The thermal resistance Rθ(j-c) is typically 1.01°C/W.
No, the products are not designed to be radiation tolerant.