RGE00TS65DGC13

$6.99

Description：5S SHORT-CIRCUIT TOLERANCE, 650V
Series：-

SKU:3ce080888251 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：5S SHORT-CIRCUIT TOLERANCE, 650V
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：74 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 50A
Power - Max：230 W
Switching Energy：1.66mJ (on), 1.02mJ (off)
Input Type：Standard
Gate Charge：104 nC
Td (on/off) @ 25°C：57ns/150ns
Test Condition：400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)：161 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247GE
Grade：-
Qualification：-

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RGE00TS65DGC13

Overview

The RGE00TS65DGC13 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a 650V collector-emitter breakdown voltage and a continuous collector current of 74A at 25°C, with a typical saturation voltage of 1.5V. The device is housed in a TO-247GE-3 through-hole package, supporting a power dissipation of 230W. It operates within a temperature range of -40°C to +175°C and includes a built-in fast recovery diode.

Feature Summary

Utilizes Field Stop Trench technology for optimized switching performance
Integrates a built-in fast recovery freewheeling diode
Designed for high-efficiency power conversion applications

Applications

Inverter circuits
Switching power supplies
Motor drive systems

Procurement Notes

Verify the specific suffix 'C13' against the official datasheet to ensure correct packaging configuration. Confirm that the TO-247GE-3 package dimensions match the target PCB footprint requirements. Check for any recent lifecycle status updates from the manufacturer regarding availability or design recommendations.

Selection Notes

Select this component when a 650V rating and high current handling capability are required. The integrated fast recovery diode simplifies circuit design by eliminating the need for external parallel diodes. Ensure thermal management solutions can handle the specified 230W power dissipation under operating conditions.

Part Context

This part belongs to the RGE series of IGBTs from ROHM Semiconductor, which are engineered for industrial and consumer electronics applications. The series emphasizes low saturation voltage and robust short-circuit withstand capabilities, making it suitable for demanding power electronic environments requiring reliable switching performance.

Replacement Considerations

Consult the official ROHM replacement guide for direct equivalents. Verify pin compatibility and electrical parameters before substituting with other 650V trench IGBTs.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.