RGE60TS65DGC13

$5.86

Description：5S SHORT-CIRCUIT TOLERANCE, 650V
Series：-

SKU:aa7b6e61627e Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：5S SHORT-CIRCUIT TOLERANCE, 650V
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：51 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 30A
Power - Max：166 W
Switching Energy：640µJ (on), 570µJ (off)
Input Type：Standard
Gate Charge：63 nC
Td (on/off) @ 25°C：40ns/114ns
Test Condition：400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：166 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247GE
Grade：-
Qualification：-

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RGE60TS65DGC13

Overview

The RGE60TS65DGC13 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Silicon technology and features a TO-247GE-3 through-hole package. The device supports a maximum collector-emitter voltage of 650 V and offers a continuous collector current of 32 A at 25°C, with a short-circuit withstand time of 5 µs. Key electrical parameters include a typical collector-emitter saturation voltage of 1.65 V, a power dissipation rating of 166 W, and a gate-emitter leakage current of 200 nA. It operates within a temperature range of -40°C to +175°C.

Feature Summary

Incorporates trench field-stop technology for optimized switching performance.
Features built-in very fast and soft recovery free-wheeling diode.
Provides 5 µs short-circuit withstand capability for robust fault protection.

Applications

Inverter circuits
Motor drive systems
Power supply units

Procurement Notes

Verify the specific suffix 'GC13' against the manufacturer's latest datasheet to confirm lead-free plating and RoHS compliance status. Confirm that the TO-247GE-3 package dimensions match the target PCB footprint requirements. Ensure the 5 µs short-circuit tolerance aligns with the system's protection logic timing constraints before finalizing procurement.

Selection Notes

Select this component when a balance between low conduction loss and high short-circuit ruggedness is required. The 650V rating suits medium-voltage applications, while the 32A current capacity fits moderate power levels. Consider the integrated FRD characteristics for inductive load commutation needs. Validate thermal management capabilities given the 166W dissipation limit in the chosen enclosure environment.

Part Context

This IGBT belongs to ROHM's RGES series, designed specifically for inverter applications requiring high reliability. The series integrates trench field-stop technology with a fast-recovery diode, targeting efficiency improvements in motor drives and power conversion systems. It represents a standard discrete solution for industrial power electronics where compact packaging and robust fault handling are critical design factors.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific model were not identified in the provided documentation. Cross-reference with other ROHM models sharing the TO-247GE-3 package and 650V/32A specifications if direct substitution is necessary, ensuring pinout and thermal characteristics remain compatible.