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The RGS00TS65HRC11 is a field-stop trench IGBT manufactured by Rohm Semiconductor, designed for automotive applications. It features an 8µs short-circuit tolerance and operates with a maximum collector-emitter voltage of 650V and a continuous collector current of 50A at 100°C. The device incorporates a built-in fast recovery diode (FRD) and achieves a typical collector-emitter saturation voltage of 1.65V. Packaged in a TO-247N housing, it supports a junction temperature range from -40°C to 175°C and complies with AEC-Q101 standards.
Verify the component status before integration, as public records indicate this specific part number may be classified as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors and ensure compliance with RoHS directives. Check lead times carefully due to potential production constraints associated with end-of-life or legacy automotive components.
Select this component when designing automotive power stages requiring high reliability under thermal stress. The 650V rating suits systems operating below this threshold, while the 50A current capacity defines the load limits. Ensure gate drive voltages remain within the specified ±30V range to maintain safe operation and prevent dielectric breakdown during transient events.
This device belongs to the RGS series of automotive-grade IGBTs, which are optimized for efficiency in electric vehicle powertrains. The series utilizes trench gate technology to balance switching speed and conduction performance. The RGS00TS65HRC11 specifically targets applications demanding compact packaging and high thermal stability in harsh automotive environments.
Public documentation lists RGS00TS65EHR and RGS00TS65DHRC11 as related variants within the same family. Verify pin compatibility and electrical parameter alignment before substitution, noting that suffix changes may indicate differences in packaging quantity or specific manufacturing lot characteristics rather than functional alterations.