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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 50A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
- Power - Max：395 W
- Switching Energy：1.4mJ (on), 1.65mJ (off)
- Input Type：Standard
- Gate Charge：67 nC
- Td (on/off) @ 25°C：37ns/140ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：182 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGS50TSX2DHRC11 is a Field Stop Trench IGBT from ROHM Semiconductor, designed for automotive and industrial inverter applications. It features a 1200V collector-emitter voltage rating and a 25A continuous collector current at 100°C. The device incorporates a built-in Fast Recovery Diode (FRD) and offers a minimum short-circuit withstand time of 10µs. Key electrical parameters include a typical collector-emitter saturation voltage of 1.7V and a typical fall time of 205ns. It is housed in a TO-247N package with dimensions of 21.0x16.0mm and a thickness of 5.2mm.
Feature Summary
- Field Stop Trench technology providing low saturation voltage and optimized switching performance
- Built-in FRD with fast and soft recovery characteristics for efficient commutation
- Qualified to AEC-Q101 standards ensuring high reliability for automotive environments
- Short circuit withstand capability of 10µs for robust system protection
Applications
- Automotive inverters
- Industrial equipment inverters
- Electric compressor drives
- High-voltage heaters
Procurement Notes
Verify the specific suffix C11 corresponds to the tube packaging configuration containing 450 units per factory pack. Confirm that the component meets RoHS compliance and lead-free plating requirements as specified in the official datasheet. Ensure the ordering part number matches the exact voltage and current ratings required for the target design.
Selection Notes
Select this component when an automotive-grade IGBT with integrated anti-parallel diode is required for 1200V systems. The 10µs short-circuit tolerance supports designs needing robust fault handling without immediate shutdown. Compare the 1.7V Vce(sat) against alternative series to ensure optimal conduction loss efficiency for the specific thermal management constraints of the application.
Part Context
This model belongs to the RGS series, which utilizes ROHM's trench gate and thin wafer technologies. The series is specifically engineered for inverter applications, balancing low conduction losses with reliable switching performance. The 'S' designation indicates suitability for inverter topologies with short-circuit times between 8-10µs.
Replacement Considerations
The RGS50TSX2GC11 is a similar standard-level product within the same series but lacks the built-in FRD and automotive qualification. Verify if the absence of the integrated diode and AEC-Q101 status impacts the specific system requirements before substitution.
