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The RGS60NL65DHRBTL is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for automotive applications. It features a built-in Fast Recovery Diode (FRD) and utilizes LPDL packaging in a TO-263-3 surface-mount configuration. The device supports a collector-emitter voltage of 650V with a continuous collector current of 60A at 100°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.9V and a maximum power dissipation of 180W. It operates within a temperature range of -40°C to +175°C and meets AEC-Q101 standards.
Verify the specific suffix HRBTL against official ROHM documentation to confirm package type and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status and check for any design-life notices or obsolescence warnings prior to procurement integration.
Select this component for designs requiring high-current handling with integrated freewheeling diodes in compact surface-mount packages. Evaluate thermal management requirements based on the 180W power dissipation rating and TO-263-3 thermal resistance. Compare saturation voltage and switching speed against alternative IGBTs to ensure compatibility with system efficiency targets.
This part belongs to ROHM's automotive-grade IGBT lineup featuring built-in diodes. It shares the LPDL package form factor with other series members but differs in current ratings and specific electrical thresholds. The HRBTL suffix typically denotes specific packaging or testing variations within the broader product family.
Direct substitutes may include other ROHM Field Stop Trench IGBTs with similar 650V ratings and TO-263-3 packages, such as the RGW series. Verify pinout compatibility and thermal characteristics before substitution.