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The RGS80TSX2HRC11 is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor, utilizing Trench Field Stop technology. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 80 A at 25°C. The device operates within a temperature range of -40°C to +175°C and dissipates up to 555 W of power. Key electrical parameters include a maximum gate-emitter voltage of 30 V, a typical saturation voltage of 2.1 V, and a leakage current of 500 nA. Packaged in a TO-247N-3 through-hole configuration, it meets AEC-Q101 automotive qualification standards.
Verify the specific suffix HRC11 against the manufacturer's official datasheet to confirm pinout and packaging details. Ensure the component matches the required AEC-Q101 automotive grade specifications for your application environment. Cross-reference the TO-247N-3 package dimensions with your PCB layout requirements before finalizing procurement orders.
Select this component when a 1200V IGBT with high short-circuit tolerance is required for automotive or industrial environments. The 80A current rating suits moderate-power applications like compressors and heaters. Consider the 2.1V saturation voltage for efficiency calculations. Verify that the TO-247N-3 package fits the thermal management design constraints of the target system.
This part belongs to ROHM's RGS series of field stop trench IGBTs designed for automotive and industrial use. It shares the series' focus on low loss characteristics while maintaining robustness against short circuits. The RGS80TSX2HRC11 represents a specific current variant within this lineup, differentiated by its 80A rating compared to other models offering higher or lower current capacities.
Check for direct substitutes within the RGS series with matching voltage and current ratings. Verify compatibility with existing gate drive circuits due to potential differences in switching speeds. Ensure any replacement maintains the same TO-247N-3 footprint and thermal resistance characteristics.