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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 85A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：85 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Power - Max：277 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：94 nC
- Td (on/off) @ 25°C：42ns/137ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：54 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGT00TS65DGC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247N package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 85 A at 25°C case temperature, reducing to 50 A at 100°C. The typical collector-emitter saturation voltage is 1.65 V at 50 A with a 15 V gate drive. Power dissipation reaches 277 W at 25°C. The device includes an integrated Fast Recovery Diode (FRD) and supports a short circuit withstand time of 5 μs.
Feature Summary
- Field Stop Trench structure for low switching loss
- Integrated very fast and soft recovery FRD
- Short circuit withstand capability up to 5 microseconds
Applications
- General inverters
- Uninterruptible power supplies (UPS)
- Power conditioners
Procurement Notes
Verify the specific ordering suffix C11 against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the component matches the required thermal resistance values for your heat sink design. Confirm RoHS compliance and lead plating specifications before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high efficiency and robust short-circuit protection. Evaluate the thermal impedance curves to ensure junction temperatures remain within the -40°C to +175°C operating range under expected load conditions. Consider the gate charge characteristics when designing the driver circuitry for optimal switching performance.
Part Context
This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM. It is designed for general-purpose power switching applications where low conduction and switching losses are critical. The TO-247N package provides a reliable through-hole mounting solution for medium-power electronics.
Replacement Considerations
Direct substitutes must match the 650V rating, 50A/85A current capabilities, and TO-247N package. Verify that any replacement also includes an integrated FRD and meets the 5μs short-circuit withstand requirement to maintain system safety margins.
FAQ
What is the maximum short circuit withstand time?
The device supports a short circuit withstand time of 5 microseconds.
Does the RGT00TS65DGC11 include a built-in diode?
Yes, it integrates a Very Fast & Soft Recovery FRD (Fast Recovery Diode).
What is the typical collector-emitter saturation voltage?
The typical VCE(sat) is 1.65 V at IC = 50 A and VGE = 15 V.
