RGT16NS65DGTL

RGT16NS65DGTL

$2.16
  • Description:IGBT TRENCH FS 650V 16A LPDS
  • Series:-

SKU:b8e1ee51a505 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 16A LPDS
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):16 A
  • Current - Collector Pulsed (Icm):24 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 8A
  • Power - Max:94 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:21 nC
  • Td (on/off) @ 25°C:13ns/33ns
  • Test Condition:400V, 8A, 10Ohm, 15V
  • Reverse Recovery Time (trr):42 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:LPDS
  • Grade:-
  • Qualification:-

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RGT16NS65DGTL

Overview

The RGT16NS65DGTL is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and operates with a collector-emitter voltage of 650V. The device supports a continuous collector current of 8A at 100°C case temperature, with a typical saturation voltage of 1.65V. It offers a short-circuit withstand time of 5μs and handles up to 94W power dissipation at 25°C. Available in LPDS or TO-262 packages, it functions within a junction temperature range of -40°C to +175°C.

Feature Summary

  • Field Stop Trench structure for low saturation voltage and switching loss
  • Integrated Very Fast & Soft Recovery FRD
  • 5μs Short Circuit Withstand Time capability
  • Lead-free plating compliant with RoHS standards

Applications

  • General Inverter systems
  • Uninterruptible Power Supplies (UPS)
  • Power Conditioners
  • Welding equipment

Procurement Notes

Verify the specific package variant required, as the base part number covers both LPDS and TO-262 configurations. Confirm the ordering suffix matches the desired packaging format, such as tape-and-reel or tube. Ensure the procurement channel provides official datasheets to validate the latest revision status before finalizing orders.

Selection Notes

Select this component for applications requiring robust short-circuit tolerance and fast recovery diodes. Evaluate thermal management requirements based on the 94W dissipation rating at 25°C case temperature. Consider the 5μs withstand time when designing protection circuits for high-voltage inductive loads.

Part Context

This device belongs to the RGT16NS65D series of 650V Field Stop Trench IGBTs from ROHM. It is designed for general-purpose inverter applications where efficiency and reliability are critical. The series integrates a high-performance FRD to minimize reverse recovery losses in switching operations.

Replacement Considerations

Direct substitutes include other 650V 8A trench IGBTs with similar pinouts and electrical characteristics. Verify that replacement parts offer comparable short-circuit withstand times and reverse recovery specifications to maintain circuit performance.

FAQ

What is the maximum short-circuit withstand time for the RGT16NS65DGTL?

The device has a minimum short-circuit withstand time of 5 microseconds.

Does the RGT16NS65DGTL include a built-in diode?

Yes, it includes a built-in Very Fast & Soft Recovery FRD (Fast Recovery Diode).

What is the operating junction temperature range?

The operating junction temperature range is from -40°C to +175°C.

RGT16NS65DGTLRGT16NS65DGTL
$2.16
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