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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 20A TO-263AB
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 10A
- Power - Max：106 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：22 nC
- Td (on/off) @ 25°C：12ns/32ns
- Test Condition：400V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AB
- Grade：-
- Qualification：-
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Overview
The RGT20NL65GTL is a field stop trench IGBT manufactured by ROHM Semiconductor, housed in an LPDL (TO-263L) package. It features a collector-emitter voltage rating of 650V and a continuous collector current of 10A at 100°C. The device supports a minimum short-circuit withstand time of 5µs and includes a built-in fast recovery diode with a typical reverse recovery time of 75ns. Key electrical parameters include a typical collector-emitter saturation voltage of 1.65V and a maximum power dissipation of 133W. The component operates within a storage temperature range of -55°C to 175°C.
Feature Summary
- Field stop trench technology for low switching loss
- Short circuit tolerance of 5 microseconds
- Integrated fast recovery freewheeling diode
Applications
- Inverter circuits requiring short-circuit robustness
- Power conversion systems utilizing 650V IGBT modules
- Industrial motor drives
Procurement Notes
Verify the Not Recommended for New Design status before initiating procurement. Confirm that existing inventory sources are reliable for legacy support. Ensure the LPDL package dimensions match the target PCB footprint. Check RoHS compliance documentation for regulatory requirements. Validate the specific suffix GTL against the required reel packaging specifications.
Selection Notes
Select this component for designs prioritizing short-circuit ruggedness over higher current density. Compare the 10A rating against thermal management capabilities in the final assembly. Evaluate the 1.65V saturation voltage impact on conduction losses relative to alternative trench technologies. Consider the 5µs short-circuit window when designing protection logic for the application.
Part Context
This part belongs to the RGT series of field stop trench IGBTs from ROHM Semiconductor. It shares architectural similarities with the RGT8NL65DGTL and RGT40NL65DGTL, differing primarily in current handling capacity. The LPDL package provides a compact surface-mount solution suitable for space-constrained power electronics applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with direct pin-to-pin replacements only if documented by the manufacturer.
