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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 30A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 15A
- Power - Max：133 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：32 nC
- Td (on/off) @ 25°C：18ns/64ns
- Test Condition：400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：55 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：-
- Qualification：-
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Overview
The RGT30NL65DGTL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes a field-stop trench structure and is housed in an LPDL (TO-263L) surface-mount package. The device features a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 15 A at 100°C. Typical collector-emitter saturation voltage is 1.65 V, with a maximum power dissipation of 133 W. It includes a built-in fast recovery freewheeling diode (FRD) with a typical reverse recovery time of 75 ns. The component supports a minimum short-circuit withstand time of 5 µs and operates within a storage temperature range of -55°C to 175°C.
Feature Summary
- Field-stop trench IGBT technology designed for low switching and conduction losses.
- Integrated very fast and soft recovery freewheeling diode (RFN series).
- Short-circuit tolerance capability of 5 microseconds for inverter applications.
Applications
- Inverter circuits requiring 5µs short-circuit protection.
- Electric compressor drives.
- High-voltage heating systems.
Procurement Notes
Verify the specific suffix 'GTL' against the manufacturer's latest datasheet to confirm packaging details, as tape-and-reel quantities may vary. Ensure the component status is reviewed, as some variants in this series are marked as Not Recommended for New Designs (NRND). Confirm RoHS compliance and lead-free plating specifications prior to integration into new production runs.
Selection Notes
Select this component for designs requiring a 650V rated IGBT with integrated anti-parallel diode in a compact SMD footprint. The 15A current rating at elevated temperatures suits moderate-power inverter topologies. Evaluate thermal management requirements based on the 133W power dissipation limit and ensure gate drive voltages remain within the specified 30V maximum rating.
Part Context
This part belongs to the RGT30NL65D series from ROHM Semiconductor, which focuses on high-efficiency power switching. The LPDL package provides a balance between thermal performance and space efficiency compared to traditional TO-220 packages. The series is engineered to reduce system size and cost in motor control and power supply applications through optimized trench cell architecture.
Replacement Considerations
Direct pin-compatible substitutes within the same ROHM family include RGT20NL65DGTL (lower current) and RGT40NL65DGTL (higher current). Cross-manufacturer replacements require verification of Vce(sat), switching times, and package dimensions to ensure circuit compatibility.
