RGT30NS65DGTL

$2.59

Description：IGBT TRENCH FS 650V 30A LPDS
Series：-

SKU:e94b6176c24f Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 30A LPDS
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 15A
Power - Max：133 W
Switching Energy：-
Input Type：Standard
Gate Charge：32 nC
Td (on/off) @ 25°C：18ns/64ns
Test Condition：400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)：55 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：LPDS
Grade：-
Qualification：-

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RGT30NS65DGTL

Overview

The RGT30NS65DGTL is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, rated for 650V collector-emitter voltage and 15A continuous collector current at 100°C. It features a typical VCE(sat) of 1.65V and supports a short-circuit withstand time of 5μs. The device integrates a Very Fast & Soft Recovery FRD with a peak reverse recovery current of 9.5A at 175°C. Power dissipation reaches 133W at 25°C case temperature. It operates within a junction temperature range of -40°C to +175°C and utilizes an LPDS (TO-262) package.

Feature Summary

Low Collector-Emitter Saturation Voltage
Short Circuit Withstand Time of 5μs
Integrated Very Fast & Soft Recovery FRD

Applications

General Inverter Systems
Uninterruptible Power Supplies (UPS)
Power Conditioners
Welding Equipment

Procurement Notes

Verify the specific ordering suffix 'T' against the official datasheet to confirm the packaging format and intended application series designation. Ensure that the component meets RoHS compliance requirements and lead plating specifications before finalizing procurement orders for production integration.

Selection Notes

Select this component based on its 650V blocking capability and 15A current rating at elevated temperatures. Consider the thermal resistance values and power dissipation limits when designing heat sinks. Verify gate drive requirements against the specified threshold voltage and total gate charge parameters for optimal switching performance.

Part Context

This part belongs to the RGT30NS65D series of Field Stop Trench IGBTs from ROHM Semiconductor. It is designed for high-efficiency switching applications requiring robust short-circuit tolerance and integrated fast-recovery diodes. The LPDS package provides a compact solution for surface-mount assembly in various power electronics designs.

Replacement Considerations

Consult the manufacturer's documentation for officially confirmed substitute part numbers. Do not assume cross-compatibility with other IGBT models without verifying electrical characteristics, pin configurations, and thermal performance against the original specifications.