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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A TO-262
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
- Power - Max：161 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：40 nC
- Td (on/off) @ 25°C：22ns/75ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：58 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：TO-262
- Grade：-
- Qualification：-
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Overview
The RGT40NS65DGC9 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor, utilizing silicon technology. It features a Field Stop Trench structure and includes a built-in Fast Recovery Diode (FRD). The device is rated for a collector-emitter voltage of 650 V and operates with a continuous collector current of 20 A at 100°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.65 V and a maximum gate-emitter voltage of ±30 V. It supports a short-circuit withstand time of 5 µs and dissipates up to 161 W of power. The component is housed in a TO-262-3 package designed for through-hole mounting.
Feature Summary
- Field Stop Trench IGBT technology providing low saturation voltage and switching loss
- Integrated very fast and soft recovery FRD for improved circuit performance
- 5 µs short-circuit tolerance capability for robust operation under fault conditions
Applications
- Inverter circuits requiring high reliability and short-circuit protection
- Industrial motor drives and control systems
- Power supply units utilizing trench FS IGBT topology
Procurement Notes
Verify the specific suffix GC9 against official datasheets to confirm pinout and packaging details. Ensure compatibility with thermal management requirements given the 161 W dissipation rating. Confirm RoHS compliance status via manufacturer documentation before integration into regulated assemblies.
Selection Notes
Select this component for applications demanding 650 V blocking capability with integrated freewheeling diodes. The TO-262-3 package suits through-hole designs requiring higher power handling than surface-mount alternatives. Evaluate thermal resistance characteristics against system heat sink capabilities to maintain junction temperature within the specified -55°C to 175°C range.
Part Context
This part belongs to the RGT40 series of ROHM's trench field-stop IGBTs. It shares architectural similarities with models like the RGT40TS65D but differs in package configuration. The series is characterized by optimized trade-offs between conduction losses and switching speeds for general-purpose power conversion.
Replacement Considerations
Direct substitutes may include other ROHM trench FS IGBTs with matching 650V/20A ratings and TO-262 packages. Verify pin compatibility and thermal specifications when cross-referencing with competitor devices offering similar short-circuit tolerances.
