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The RGT40NS65DGTL is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in an LPDS (TO-262) package. It features a collector-emitter voltage of 650V and a continuous collector current of 20A at 100°C. The typical collector-emitter saturation voltage is 1.65V. Power dissipation reaches 161W at a case temperature of 25°C. The device includes a built-in Very Fast & Soft Recovery FRD with a pulsed forward current of 60A. Short circuit withstand time is specified at 5μs. Operating junction temperature ranges from -40°C to +175°C.
Verify the specific ordering suffix 'GTL' against the manufacturer's latest documentation to confirm packaging details such as tape width and reel size. Confirm that the component meets all required environmental compliance standards for the target market before finalizing procurement orders.
Select this component based on the 650V blocking voltage and 20A continuous current rating at elevated temperatures. Ensure the thermal design accommodates the 161W power dissipation limit at 25°C case temperature. Verify gate drive requirements align with the specified threshold voltage and total gate charge characteristics.
This part belongs to the RGT40NS65D series of Field Stop Trench IGBTs. It is designed for high-efficiency power switching applications requiring robust short-circuit tolerance. The LPDS package provides a balance between thermal performance and mounting convenience for surface-mount assembly.
Consult official substitution lists for equivalent Field Stop Trench IGBTs with matching voltage and current ratings. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers or packages.
The device supports a short circuit withstand time of 5 microseconds.
Yes, it integrates a Very Fast & Soft Recovery Free Wheeling Diode (FRD).
The operating junction temperature range is from -40°C to +175°C.