RGT40TM65DGC9

Overview

The RGT40TM65DGC9 is a single-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for inverter applications. It features a 650 V collector-emitter breakdown voltage and supports a continuous collector current of 17 A at 25°C. The device integrates a built-in Fast Recovery Diode (FRD) with a typical reverse recovery time of 65 ns. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.1 V and a gate-emitter maximum voltage of 30 V. It offers a short-circuit withstand time of 5 µs and operates within a junction temperature range of -40°C to +175°C. Power dissipation is rated at 39 W, housed in a TO-220NFM-3 through-hole package.

Feature Summary

• Field Stop Trench structure providing low collector-emitter saturation voltage and reduced switching losses.
• Integrated Very Fast & Soft Recovery FRD optimized for high-frequency inverter operation.
• Robust 5 µs short-circuit tolerance capability for enhanced system reliability.

Applications

• Inverter circuits
• Industrial motor drives
• Switching power supplies

Procurement Notes

Verify the specific suffix 'GC9' against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS compliance status. Check for any Product Change Notifications (PCN) regarding material or fabrication line changes that may affect long-term supply continuity. Ensure thermal management designs account for the specified 39 W power dissipation rating under actual operating conditions.

Selection Notes

Select this component when a 650 V IGBT with integrated fast recovery diode is required for inverter topologies. The 5 µs short-circuit tolerance allows for simplified protection circuitry compared to standard devices. Compare the 17 A continuous current rating against peak load requirements to ensure adequate margin. Consider the TO-220NFM package constraints for PCB layout and heatsinking capabilities relative to alternative packages like TO-262.

Part Context

This part belongs to the RGT series of trench field-stop IGBTs from ROHM Semiconductor. The 'T' designation indicates suitability for inverter applications with 5 µs short-circuit tolerance. The '65' denotes the 650 V voltage class, while 'D' signifies the inclusion of a built-in FRD. This series is engineered to balance low conduction losses with fast switching performance for efficient power conversion.

Replacement Considerations

The RGT30TM65DGC9 is a related variant within the same family offering lower current ratings. Verify if the RGT50TM65DGC9 provides sufficient headroom for higher current demands. Cross-reference pinouts and thermal characteristics before substituting with other manufacturers' 650 V trench IGBTs featuring integrated diodes.