RGT40TS65DGC11

$3.37

Description：IGBT TRENCH FS 650V 40A TO-247N
Series：-

SKU:21e7dd7e45fa Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 40A TO-247N
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
Power - Max：144 W
Switching Energy：-
Input Type：Standard
Gate Charge：40 nC
Td (on/off) @ 25°C：22ns/75ns
Test Condition：400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：58 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247N
Grade：-
Qualification：-

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RGT40TS65DGC11

Overview

The RGT40TS65DGC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, rated for a collector-emitter voltage of 650V and a continuous collector current of 20A at 100°C. It features a TO-247N-3 package with through-hole mounting. The device provides a typical collector-emitter saturation voltage of 1.65V at 25°C and supports a maximum power dissipation of 144W at 25°C case temperature. It includes an integrated Fast Recovery Diode (FRD) and offers a short circuit withstand time of 5μs.

Feature Summary

Field Stop Trench structure designed to minimize switching losses and improve efficiency.
Integrated Very Fast & Soft Recovery FRD reduces reverse recovery charge and peak current.
Short Circuit Withstand Time capability of 5μs enhances system robustness against fault conditions.

Applications

General Inverter
UPS
Power Conditioner
Welder

Procurement Notes

Verify the latest specifications directly with ROHM before implementation, as datasheets are subject to change without notice. Confirm RoHS compliance and lead plating details with the manufacturer's sales office. Ensure derating characteristics are strictly followed during thermal design to prevent malfunction or failure under varying operating temperatures.

Selection Notes

Select this component for applications requiring low saturation voltage and fast diode recovery within a TO-247N package. Evaluate thermal resistance values carefully, noting the junction-to-case resistance is 1.04°C/W for the IGBT and 2.28°C/W for the diode. Consider the 5μs short circuit tolerance when designing protection circuits for inductive loads.

Part Context

This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM. It is specifically engineered for high-speed switching applications where low conduction and switching losses are critical. The inclusion of a built-in FRD simplifies circuit topology by eliminating the need for external anti-parallel diodes in many configurations.

Replacement Considerations

Check for direct replacements within the same ROHM family that may offer updated packaging or minor electrical improvements. Verify pinout compatibility and thermal characteristics if substituting with components from other manufacturers to ensure proper heat sinking and electrical interface matching.

FAQ

What is the maximum short circuit withstand time for the RGT40TS65D?

The device has a specified short circuit withstand time of 5μs, provided the gate-emitter voltage remains within safe limits and the junction temperature does not exceed its maximum rating.

Does the RGT40TS65D include an internal freewheeling diode?

Yes, it integrates a Very Fast & Soft Recovery FRD (Fast Recovery Diode), which helps reduce switching losses and electromagnetic interference during commutation.