RGT40TS65DGC13

$8.53

Description：IGBT TRENCH FS 650V 40A TO-247G
Series：-

SKU:53bfb411adf1 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 40A TO-247G
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
Power - Max：144 W
Switching Energy：-
Input Type：Standard
Gate Charge：40 nC
Td (on/off) @ 25°C：22ns/75ns
Test Condition：400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：58 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247G
Grade：-
Qualification：-

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RGT40TS65DGC13

Overview

The RGT40TS65DGC13 is a trench field-stop type IGBT manufactured by ROHM Semiconductor, designed for inverter applications. It features a 650V collector-emitter voltage rating and a continuous collector current of 20A at 100°C. The device incorporates a built-in fast recovery diode with a typical reverse recovery time of 60ns. Key electrical parameters include a typical collector-emitter saturation voltage of 1.65V and a short-circuit withstand time of 5µs. It is housed in a TO-247GE package with a maximum power dissipation of 144W and operates within a storage temperature range of -55°C to 175°C.

Feature Summary

Trench field-stop technology providing low collector-emitter saturation voltage and reduced switching losses.
Integrated very fast and soft recovery FRD (RFN series) for efficient freewheeling.
Short-circuit withstand capability of 5µs to enhance system reliability under fault conditions.

Applications

Inverter circuits
General-purpose switching applications

Procurement Notes

Verify the specific ordering suffix GC13 against official ROHM documentation to confirm packaging details and compliance status. Confirm component availability as this part may be designated for existing customers only. Ensure all procurement channels provide valid traceability data consistent with manufacturer standards.

Selection Notes

Select this component for designs requiring a 650V IGBT with integrated fast recovery diode and 5µs short-circuit tolerance. Verify that the thermal management solution supports the 144W power dissipation rating in the TO-247GE package. Ensure gate drive requirements align with the specified saturation voltage characteristics.

Part Context

This component belongs to the RGT series of trench field-stop IGBTs from ROHM Semiconductor. The 'T' designation indicates suitability for inverter applications with specific short-circuit ratings. The product is intended to support existing designs rather than new developments.

Replacement Considerations

Consult official ROHM substitution guides for verified alternatives. Generic replacements may not match the specific 5µs short-circuit withstand time or the integrated RFN diode characteristics required for inverter compatibility.