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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 48A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：48 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
- Power - Max：194 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：49 nC
- Td (on/off) @ 25°C：27ns/88ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：58 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：-
- Qualification：-
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Overview
The RGT50NL65DGTL is a single silicon Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a 650 V collector-emitter voltage rating and a continuous collector current of 48 A at 25°C. The device incorporates a built-in fast recovery diode (FRD) and offers a short-circuit withstand time of 5 µs. Packaged in an LPDL TO-263-3 surface-mount format, it exhibits a typical collector-emitter saturation voltage of 2.1 V and a power dissipation capacity of 194 W. Operating temperatures range from -40°C to +175°C.
Feature Summary
- Field Stop Trench IGBT technology for optimized switching performance
- Integrated very fast and soft recovery FRD
- 5 µs short-circuit tolerance capability
- LPDL package design for efficient thermal management
Applications
- Inverter circuits
- Motor drive systems
- Power supply units
Procurement Notes
Verify the specific ordering suffix against official ROHM documentation to ensure correct packaging and variant selection. Confirm RoHS compliance status through the manufacturer's latest specification sheet before integration into regulated designs.
Selection Notes
Select this component for applications requiring high current handling with integrated freewheeling diode functionality. Ensure gate drive voltages remain within the specified 30 V limit and verify thermal management capabilities align with the 194 W power dissipation rating under expected operating conditions.
Part Context
This part belongs to the RGT series of trench field-stop IGBTs designed for inverter applications. It shares architectural similarities with other models in the lineup but is distinguished by its specific 48 A current rating and 194 W power dissipation capacity within the LPDL package form factor.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided data. Evaluate other RGT series devices with matching voltage ratings and comparable current capacities, ensuring pin compatibility and similar electrical characteristics for potential cross-reference.
