RGT50NS65DGC9

$4.13

Description：IGBT TRENCH FS 650V 48A TO-262
Series：-

SKU:4896a8a6193a Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 48A TO-262
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：48 A
Current - Collector Pulsed (Icm)：75 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
Power - Max：194 W
Switching Energy：-
Input Type：Standard
Gate Charge：49 nC
Td (on/off) @ 25°C：27ns/88ns
Test Condition：400V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：58 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package：TO-262
Grade：-
Qualification：-

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RGT50NS65DGC9

Overview

The RGT50NS65DGC9 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for inverter applications with a 5µs short-circuit tolerance. It features a built-in Fast Recovery Diode (FRD) and utilizes LPDS packaging. Key electrical parameters include a collector-emitter voltage of 650V, a continuous collector current of 25A at 100°C, and a typical saturation voltage of 1.65V. The device operates within a temperature range of -55°C to 175°C, dissipating up to 194W of power.

Feature Summary

Field Stop Trench IGBT technology providing low saturation voltage and switching loss
Integrated Very Fast & Soft Recovery FRD for improved performance
Short circuit withstand time capability of 5µs for robust operation

Applications

Inverter circuits requiring high reliability
Power conversion systems utilizing trench IGBT topology
Applications necessitating integrated fast recovery diodes

Procurement Notes

Verify the specific suffix GC9 against official datasheets to confirm package type and compliance status. Confirm RoHS and REACH SVHC details directly from the manufacturer's documentation before procurement. Ensure the component matches the required thermal and electrical specifications for the target design.

Selection Notes

Select this component for designs requiring a 650V rated Field Stop Trench IGBT with integrated FRD. Consider the 5µs short-circuit tolerance when designing protection circuits. Verify that the LPDS package and 194W power dissipation rating align with the thermal management strategy of the application.

Part Context

This part belongs to the RGT series of ROHM Semiconductor IGBTs, specifically optimized for inverter use. It shares characteristics with other models like the RGT50NS65DGTL but may differ in packaging or specific suffix configurations. The series emphasizes low saturation voltage and fast recovery diode integration.

Replacement Considerations

The RGT50NS65DGTL is a related model within the same series. Verify pin compatibility and exact parameter matching before substitution. Consult official replacement lists for confirmed equivalents.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.