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The RGT60TS65DGC13 is a single IGBT from ROHM Semiconductor's Trench Field Stop series, housed in a TO-247GE package. It features a 650V collector-emitter breakdown voltage and a continuous collector current of 60A at 100°C. The device includes a built-in fast recovery freewheeling diode (FRD) with a reverse recovery time of approximately 58ns. Key electrical parameters include a typical collector-emitter saturation voltage of 1.6V and a short-circuit withstand time of 5µs. Designed for high-efficiency switching, it supports operation up to a junction temperature of 175°C.
Verify the specific suffix GC13 against official ROHM documentation to confirm packaging details and RoHS compliance status. Confirm availability as this component may be subject to lifecycle changes or obsolescence notices. Ensure ordering quantities align with manufacturer tube packing specifications.
Select this component for designs requiring a balance of low conduction loss and high short-circuit ruggedness. The integrated FRD simplifies circuit topology by eliminating external diodes. Verify thermal management requirements given the 175°C maximum junction temperature rating and ensure gate drive voltages remain within specified limits.
This part belongs to the RGT series of Trench Field Stop IGBTs, optimized for inverter applications. It shares architectural similarities with other models in the RGTH and RGW families but offers specific current and voltage ratings tailored for medium-power switching tasks.
Officially documented substitutes include the RGTH60TS65DGC11 and RGTH00TS65DGC11. These alternatives share similar pinouts and electrical characteristics but may differ in packaging or specific parameter tolerances. Verify compatibility before implementation.