RGT80TS65DGC11

Overview

The RGT80TS65DGC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, rated for 650V collector-emitter voltage and 40A continuous collector current at 100°C. It features a TO-247N package with three pins for through-hole mounting. The device includes an integrated Fast Recovery Diode (FRD) and supports a maximum power dissipation of 234W at 25°C case temperature. Operating junction temperatures range from -40°C to +175°C, with a short circuit withstand time of 5μs.

Feature Summary

• Field Stop Trench structure providing low saturation voltage and switching loss
• Integrated Very Fast & Soft Recovery FRD (RFN-Series)
• Short Circuit Withstand Time capability of 5μs
• Lead-free plating compliant with RoHS standards

Applications

• General Inverter systems
• Uninterruptible Power Supplies (UPS)
• Power Conditioners
• Industrial Welders

Procurement Notes

Verify the specific ordering suffix 'C11' against the manufacturer's latest datasheet to confirm packaging details and marking codes. Ensure compliance with environmental directives such as RoHS before finalizing procurement specifications for mass production.

Selection Notes

Select this component for applications requiring high-speed switching and robust short-circuit tolerance. Evaluate thermal resistance values and derating curves based on the expected operating case temperature to ensure reliable performance within the specified junction temperature limits.

Part Context

This part belongs to the RGT series of Field Stop Trench IGBTs from ROHM. It is designed for general-purpose power conversion applications where efficiency and switching speed are critical. The TO-247N package facilitates effective heat dissipation for medium-power designs.

Replacement Considerations

Direct substitutes include other ROHM 650V Field Stop Trench IGBTs in the TO-247N package, such as the RGTH or RGS series, provided electrical ratings and pin configurations match the design requirements.